IPW65R190C6

Specifications

Seri

CoolMOS C6

Gate Charge Qg Max Vgs

73 nC @ 10 V

Pin Sayısı

3

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

TO-247-3

Tradename

CoolMOS

Rise Time

12 ns

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Drain To Source Voltage Vdss

650 V

Montaj Stili

Through Hole

Ambalaj

Tube

Qg Gate Charge

73 nC

Power Dissipation Max

151W (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Paket Adedi

240

Drain To Source Breakdown Voltage

700 V

Fet Type

N-Channel

Ürün Durumu

Active

Tedarikçi Cihaz Paketi

PG-TO247-3-41

Uzunluk

16.13 mm

Min. Çalışma Sıcaklığı

-55 °C

Input Capacitance

1.62 nF

Pd Power Dissipation

151 W

Minimum Operating Temperature

- 55 C

Maks. Çalışma Sıcaklığı

150 °C

Vgs Th Gatesource Threshold Voltage

3.5 V

Birim Ağırlık

0.211644 oz

Transistor Polarity

N-Channel

Configuration

Single

Power Dissipation

151 W

Id Continuous Drain Current

20.2 A

Vgs Gatesource Voltage

- 20 V, + 20 V

Turn On Delay Time

13 ns

Number Of Channels

1 Channel

Input Capacitance Ciss Max Vds

1620 pF @ 100 V

Ürün Tipi

MOSFET

Transistor Type

1 N-Channel

Genişlik

5.21 mm

Max Power Dissipation

151 W

Typical Turnoff Delay Time

133 nS