IPW50R399CP

Specifications

Package Quantity

240

Drain To Source Resistance

399 mΩ

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20 V

Element Configuration

Single

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Ds Breakdown Voltagemin

500 V

Continuous Drain Current Id

9 A

Part Package Code

TO-247AD

Power Dissipationmax Abs

83 W

Lifecycle Status

Obsolete (Last Updated: 2 years ago)

Jesd30 Code

R-PSFM-T3

Jedec95 Code

TO-247AD

Reach Svhc

No SVHC

RoHS

Compliant

Drain Currentmax Abs Id

9 A

Onstate Resistance

399 mΩ

Rds On Max

399 mΩ

Transistor Application

SWITCHING

Turn Off Delay Time

80 ns

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Operating Temperaturemax

175 °C

Polaritychannel Type

N-CHANNEL

Risk Rank

5.83

Pin Sayısı

3

Max Power Dissipation

83 W

Package Shape

RECTANGULAR

Rohs Code

Yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

3 V

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE

Üretici Parça No

IPW50R399CP

Power Dissipation

83 W

Maks. Çalışma Sıcaklığı

150 °C

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn On Delay Time

35 ns