IPW50R350CP

Specifications

Maks. Çalışma Sıcaklığı

150 °C

Gate To Source Voltage Vgs

20 V

Drain To Source Resistance

350 mΩ

Package Quantity

240

Power Dissipation

89

Turn On Delay Time

35 ns

Continuous Drain Current Id

10 A

Element Configuration

Single

Drain To Source Breakdown Voltage

500 V

Reach Svhc

No SVHC

RoHS

Compliant

Lifecycle Status

Obsolete (Last Updated: 2 years ago)

Fet Type

N-Channel

Ürün Durumu

Active

Rds On Max

350 mΩ

Paket

Bulk

Vgs Max

±20V

Tedarikçi Cihaz Paketi

PG-TO247-3-21

Input Capacitance

1.02 nF

Dual Supply Voltage

550 V

Onstate Resistance

350 mΩ

Min. Çalışma Sıcaklığı

-55 °C

Turn Off Delay Time

80 ns

Current Continuous Drain Id25

10A (Tc)

Rise Time

14 ns

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Drain To Source Voltage Vdss

500 V

Montaj Tipi

Through Hole

Rds On Max Id Vgs

350mOhm @ 5.6A, 10V

Power Dissipation Max

89W (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

3.5V @ 370µA

Input Capacitance Ciss Max Vds

1020 pF @ 100 V

Seri

CoolMOS™

Gate Charge Qg Max Vgs

25 nC @ 10 V

Max Power Dissipation

89 W

Pin Sayısı

3

Channel Type

N

Terminal

Through Hole

Technology

MOSFET (Metal Oxide)