IPU60R1K4C6

Specifications

Technology

Si

Configuration

Single

Ürün Tipi

MOSFET

Montaj Stili

Through Hole

Rise Time

7 ns

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel

Rds On Max Id Vgs

1.4Ohm @ 1.1A, 10V

Paket

Bulk

Birim Ağırlık

0.011993 oz

Channel Type

N

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Id Continuous Drain Current

3.2 A

Vgs Max

±20V

Seri

XPU60R1

Yükseklik

6.22 mm

Typical Turnoff Delay Time

40 ns

Genişlik

2.38 mm

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-251-3

Fabrika Paket Adedi

1500

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Tedarikçi Cihaz Paketi

PG-TO-251-3-341

Input Capacitance Ciss Max Vds

200 pF @ 100 V

Ürün Durumu

Active

Part Aliases

SP000931530 IPU60R1K4C6BKMA1

Ambalaj

Tube

RoHS

Details

Power Dissipation Max

28.4W (Tc)

Typical Turnon Delay Time

8 ns

Fet Type

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Vds Drainsource Breakdown Voltage

600 V

Gate Charge Qg Max Vgs

9.4 nC @ 10 V

Uzunluk

6.73 mm

Number Of Channels

1 Channel

Rds On Drainsource Resistance

1.26 Ohms

Drain To Source Voltage Vdss

650 V