IPS050N03LG

Specifications

Vgsth Max Id

2.2V @ 250µA

Transistor Element Material

SILICON

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Reflow Temperaturemax S

NOT SPECIFIED

Number Of Terminals

3

Fet Type

N-Channel

Rohs Code

Yes

Kurşunsuz Kodu

Yes

Part Life Cycle Code

Obsolete

Drainsource On Resistancemax

0.0073 Ω

Package Description

IN-LINE, R-PSIP-T3

HTS Kodu

8541.29.00.95

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Jesd30 Code

R-PSIP-T3

Channel Type

N

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-251AA

Terminal Kaplaması

MATTE TIN

REACH Uyumluluk Kodu

compliant

Yüzey Montaj

NO

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

31 nC @ 10 V

Moisture Sensitivity Levels

1

Package Style

IN-LINE

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Tedarikçi Cihaz Paketi

PG-TO252-3

Pulsed Drain Currentmax Idm

350 A

Input Capacitance Ciss Max Vds

3200 pF @ 15 V

Drain Currentmax Abs Id

50 A

Operating Temperaturemax

175 °C

Terminal Formu

THROUGH-HOLE

Pin Sayısı

3

Risk Rank

5.8

Paket

Bulk

Polaritychannel Type

N-CHANNEL

Qualification Status

Not Qualified

Seri

OptiMOS®

Ürün Durumu

Active

Ds Breakdown Voltagemin

30 V