IPI80N04S3-03

Specifications

Tedarikçi Cihaz Paketi

PG-TO262-3-1

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

80

Current Continuous Drain Id25

80A (Tc)

Kılıf / Paket

TO-262-3 Long Leads, I²Pak, TO-262AA

Paket

Bulk

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Vgs Max

±20V

Input Capacitance Ciss Max Vds

7300 pF @ 25 V

Gate Charge Qg Max Vgs

110 nC @ 10 V

Power Dissipation

188

Rds On Max Id Vgs

3.5mOhm @ 80A, 10V

Montaj Tipi

Through Hole

Drain To Source Voltage Vdss

40 V

Vgsth Max Id

4V @ 120µA

Seri

*

Channel Type

N

Technology

MOSFET (Metal Oxide)

Ürün Durumu

Active

Power Dissipation Max

188W (Tc)

Fet Type

N-Channel