IPI65R600C6

Specifications

Yükseklik

9.45 mm

Number Of Channels

1 Channel

Gate Charge Qg Max Vgs

23 nC @ 10 V

Pd Power Dissipation

63 W

Rds On Max Id Vgs

600mOhm @ 2.1A, 10V

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Tradename

CoolMOS

Part Aliases

IPI65R6C6XK SP000850504 IPI65R600C6XKSA1

Ürün Durumu

Active

Qg Gate Charge

23 nC

Halogen Free

Halogen Free

Transistor Type

1 N-Channel

Vgsth Max Id

3.5V @ 210µA

Seri

CoolMOS C6

Min. Çalışma Sıcaklığı

-55 °C

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Fabrika Paket Adedi

500

Vgs Max

±20V

Max Dual Supply Voltage

650 V

Id Continuous Drain Current

7.3 A

Current Continuous Drain Id25

7.3A (Tc)

Kılıf / Paket

TO-262-3

Max Power Dissipation

63 W

Montaj

Through Hole

Input Capacitance

440 pF

Vgs Gatesource Voltage

- 20 V, + 20 V

Vds Drainsource Breakdown Voltage

700 V

Gate To Source Voltage Vgs

20 V

Paket

Bulk

Input Capacitance Ciss Max Vds

440 pF @ 100 V

Montaj Tipi

Through Hole

Rise Time

9 ns

Ambalaj

Tube

Tedarikçi Cihaz Paketi

PG-TO262-3-1

Transistor Polarity

N-Channel

Continuous Drain Current Id

7.3 A