IPD60R520CP

Specifications

Element Configuration

Single

Turn Off Delay Time

74 ns

Power Dissipation

66 W

Turn On Delay Time

17 ns

Tedarikçi Cihaz Paketi

PG-TO252-3-313

Current Continuous Drain Id25

6.8A (Tc)

Input Capacitance Ciss Max Vds

630 pF @ 100 V

RoHS

Compliant

Paket

Bulk

Drain To Source Breakdown Voltage

600 V

Rds On Max Id Vgs

520mOhm @ 3.8A, 10V

Drain To Source Voltage Vdss

600 V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

31 nC @ 10 V

Rds On Max

9.1 mΩ

Gate To Source Voltage Vgs

20 V

Vgs Max

±20V

Maks. Çalışma Sıcaklığı

150 °C

Vgsth Max Id

3.5V @ 250µA

Power Dissipation Max

66W (Tc)

Technology

MOSFET (Metal Oxide)

Min. Çalışma Sıcaklığı

-55 °C

Input Capacitance

2.36 nF

Dual Supply Voltage

650 V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Number Of Elements

1

Terminal

SMD/SMT

Max Power Dissipation

190 W

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Ürün Durumu

Active

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Drain To Source Resistance

520 mΩ

Reach Svhc

No SVHC

Nominal Vgs

3 V

Continuous Drain Current Id

6.8 A

Rise Time

12 ns