IPB60R250CP

Specifications

RoHS

Compliant

Vgs Max

±20V

Uzunluk

10.31 mm

Drain To Source Resistance

250 mΩ

Montaj Tipi

Surface Mount

Technology

MOSFET (Metal Oxide)

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

40 ns

Min. Çalışma Sıcaklığı

-55 °C

Element Configuration

Single

Max Power Dissipation

104 W

Yükseklik

4.57 mm

Ürün Durumu

Active

Power Dissipation

104

Halogen Free

Halogen Free

Genişlik

9.45 mm

Dual Supply Voltage

650 V

Input Capacitance

1.2 nF

Current Continuous Drain Id25

12A (Tc)

Rds On Max Id Vgs

250mOhm @ 7.8A, 10V

Rise Time

17 ns

Paket

Bulk

Tedarikçi Cihaz Paketi

PG-TO263-3-2

Continuous Drain Current Id

12 A

Pin Sayısı

3

Terminal

SMD/SMT

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Kılıf / Paket

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

600 V

Input Capacitance Ciss Max Vds

1200 pF @ 100 V

Gate To Source Voltage Vgs

20 V

Channel Type

N

Gate Charge Qg Max Vgs

35 nC @ 10 V

Turn Off Delay Time

110 ns

Power Dissipation Max

104W (Tc)

Rds On Max

250 mΩ

Reach Svhc

No SVHC

Maks. Çalışma Sıcaklığı

150 °C

Vgsth Max Id

3.5V @ 520µA