IPB50CN10NG

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

20 A

Drainsource On Resistancemax

0.05 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Jedec95 Code

TO-263AB

Operating Temperaturemax

175 °C

Üretici Parça No

IPB50CN10NG

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Power Dissipationmax Abs

44 W

Reflow Temperaturemax S

40

Yüzey Montaj

YES

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

29 mJ

Part Package Code

D2PAK

Case Connection

DRAIN

Risk Rank

5.8

Number Of Terminals

2

Package Description

SMALL OUTLINE, R-PSSO-G2

Terminal Kaplaması

MATTE TIN

Part Life Cycle Code

Obsolete

Moisture Sensitivity Levels

1

Terminal Formu

GULL WING

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Number Of Elements

1

Package Style

SMALL OUTLINE

Ds Breakdown Voltagemin

100 V

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

80 A

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

4