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IPB47N10S-33

Infineon

IPB47N10S-33

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$2.51
  • 10+ pcs$2.37
  • 100+ pcs$2.23
  • 500+ pcs$2.11

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RoHS

Compliant

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Specifications

Qualification Status
Not Qualified
Kurşunsuz Kodu
yes
Rise Time
23ns
Continuous Drain Current Id
47A
Pin Sayısı
3
Polaritychannel Type
N-CHANNEL
Pulsed Drain Currentmax Idm
188A
Operating Mode
ENHANCEMENT MODE
Pin Sayısı
4
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Sayısı
2
Kılıf / Paket
TO-263-3
RoHS Durumu
RoHS Compliant
Turn Off Delay Time
63 ns
Terminal Kaplaması
Matte Tin (Sn)
Gate To Source Voltage Vgs
20V
Drain To Source Breakdown Voltage
100V
Terminal Formu
GULL WING
Jesd30 Code
R-PSSO-G2
Capacitance Input
2.5nF
Power Dissipation Max
175W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Rds On Max
33 mΩ
Number Of Elements
1
JESD-609 Kodu
e3
Ambalaj
Tape & Reel (TR)
Yayın Yılı
2001
Maks. Çalışma Sıcaklığı
175°C
Drain To Source Voltage Vdss
100V
Yüzey Montaj
YES
Max Dual Supply Voltage
100V
Avalanche Energy Rating Eas
400 mJ
Element Configuration
Single
Turn On Delay Time
25 ns
Min. Çalışma Sıcaklığı
-55°C
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Halogen Free
Halogen Free
ECCN Kodu
EAR99
Power Dissipation
175W

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