IPB16CNE8NG

Specifications

Drain Currentmax Abs Id

53 A

Pulsed Drain Currentmax Idm

212 A

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Pin Sayısı

4

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

85 V

Transistor Application

SWITCHING

Package Style

SMALL OUTLINE

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Part Life Cycle Code

Obsolete

Terminal Kaplaması

MATTE TIN

Moisture Sensitivity Levels

1

Terminal Formu

GULL WING

Number Of Terminals

2

Package Description

SMALL OUTLINE, R-PSSO-G2

Part Package Code

D2PAK

Case Connection

DRAIN

Risk Rank

5.75

Avalanche Energy Rating Eas

107 mJ

Transistor Element Material

SILICON

Reflow Temperaturemax S

NOT SPECIFIED

Yüzey Montaj

YES

Power Dissipationmax Abs

100 W

Operating Temperaturemax

175 °C

Üretici Parça No

IPB16CNE8NG

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0162 Ω

Jedec95 Code

TO-263AB

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE