IPB096N03LG

Specifications

Power Dissipationmax Abs

42 W

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Operating Temperaturemax

175 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Id

35 A

Ürün Durumu

Active

Case Connection

DRAIN

Part Package Code

D2PAK

Risk Rank

5.82

Technology

MOSFET (Metal Oxide)

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Avalanche Energy Rating Eas

40 mJ

Reflow Temperaturemax S

40

Yüzey Montaj

YES

Drain To Source Voltage Vdss

30 V

Package Style

SMALL OUTLINE

Power Dissipation Max

42W (Tc)

Moisture Sensitivity Levels

1

Part Life Cycle Code

Obsolete

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1600 pF @ 15 V

Package Description

SMALL OUTLINE, R-PSSO-G2

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Drain Currentmax Abs Id

35 A

Tedarikçi Cihaz Paketi

PG-TO263-3

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

Yes

Üretici Parça No

IPB096N03LG

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.0141 Ω

Jedec95 Code

TO-263AB

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Transistor Element Material

SILICON

Seri

OptiMOS™3

Vgsth Max Id

2.2V @ 250µA