IPB042N03LGXT

Specifications

Ds Breakdown Voltagemin

30 V

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

400 A

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Number Of Terminals

2

Package Description

SMALL OUTLINE, R-PSSO-G2

Part Life Cycle Code

Active

Terminal Formu

GULL WING

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Package Style

SMALL OUTLINE

Transistor Element Material

SILICON

Yüzey Montaj

YES

Reflow Temperaturemax S

NOT SPECIFIED

Avalanche Energy Rating Eas

60 mJ

Case Connection

DRAIN

Risk Rank

5.75

Drain Currentmax Id

70 A

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.006 Ω

Jedec95 Code

TO-263AB

ECCN Kodu

EAR99

Operating Temperaturemax

175 °C

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Üretici Parça No

IPB042N03LGXT

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE