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Infineon

IGO60R070D1AUMA2

JFETs Transistors

RoHS: Compliant

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Specifications

Channel Type
N
Channel Mode
Enhancement
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
31A
Pd Power Dissipation
125 W
Seri
CoolGaN 600V
Vgs Gatesource Voltage
- 10 V, + 10 V
Number Of Channels
1 Channel
Technology
GaN
Rds On Drainsource Resistance
70 mOhms
Vgs Th Gatesource Threshold Voltage
900 mV
Vds Drainsource Breakdown Voltage
800 V
Montaj Stili
SMD/SMT
Transistor Polarity
N-Channel
Kılıf / Paket
PG-DSO-20
Maks. Çalışma Sıcaklığı
+ 150 C
Qg Gate Charge
5.8 nC
Id Continuous Drain Current
31 A

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