BUZ32H3045A

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

120 mJ

Üretici Parça No

BUZ32H3045A

Package Shape

RECTANGULAR

Reflow Temperaturemax S

NOT SPECIFIED

Drain To Source Voltage Vdss

200 V

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSSO-G2

Seri

SIPMOS®

Input Capacitance Ciss Max Vds

530 pF @ 25 V

Risk Rank

5.29

Tedarikçi Cihaz Paketi

PG-TO263-3

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

YES

Technology

MOSFET (Metal Oxide)

Number Of Elements

1

Fet Type

N-Channel

Case Connection

DRAIN

Terminal Formu

GULL WING

Additional Feature

AVALANCHE RATED

Rohs Code

Yes

Power Dissipation Max

75W (Tc)

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Qualification Status

COMMERCIAL

Polaritychannel Type

N-CHANNEL

Paket

Bulk

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

REACH Uyumluluk Kodu

unknown

Rds On Max Id Vgs

400mOhm @ 6A, 10V

Drain Currentmax Id

9.5 A

Drainsource On Resistancemax

0.4 Ω

Vgsth Max Id

4V @ 1mA

Current Continuous Drain Id25

9.5A (Tc)

Part Life Cycle Code

Active

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

38 A

Jedec95 Code

TO-263AA