BSZ100N06LS3GXT

Specifications

Avalanche Energy Rating Eas

55 mJ

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

compliant

Polaritychannel Type

N-CHANNEL

Jesd30 Code

S-PDSO-N5

Power Dissipationmax Abs

50 W

Continuous Drain Current Id

11

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Channel Type

N

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

80 A

Package Style

SMALL OUTLINE

Transistor Application

SWITCHING

Rohs Code

Yes

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, S-PDSO-N5

Risk Rank

5.76

Üretici Parça No

BSZ100N06LS3GXT

ECCN Kodu

EAR99

Drain Currentmax Id

20 A

Additional Feature

LOGIC LEVEL COMPATIBLE

Number Of Elements

1

Terminal Formu

NO LEAD

Number Of Terminals

5

Package Body Material

PLASTIC/EPOXY

Fabrika Tedarik Süresi

26 Weeks

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60 V

Case Connection

DRAIN

Drainsource On Resistancemax

0.0179 Ω

Package Shape

SQUARE

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Temperaturemin

-55 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Pozisyonu

DUAL