BSP297L6327

Specifications

Risk Rank

5.25

Drain Currentmax Id

0.66 A

Package Style

SMALL OUTLINE

Kılıf / Paket

TO-261-4, TO-261AA

Üretici Parça No

BSP297L6327

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

200 V

Input Capacitance Ciss Max Vds

357 pF @ 25 V

Technology

MOSFET (Metal Oxide)

Rds On Max Id Vgs

1.8Ohm @ 660mA, 10V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Current Continuous Drain Id25

660mA (Ta)

HTS Kodu

8541.29.00.75

Tepe Reflow Sıcaklığı (°C)

260

Rohs Code

Yes

Pin Sayısı

4

Drainsource On Resistancemax

1.8 Ω

Package Description

SMALL OUTLINE, R-PDSO-G4

Part Life Cycle Code

Obsolete

Drain Currentmax Abs Id

0.66 A

Jesd30 Code

R-PDSO-G4

Package Shape

RECTANGULAR

Qualification Status

Not Qualified

Reflow Temperaturemax S

40

JESD-609 Kodu

e3

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

ECCN Kodu

EAR99

Number Of Terminals

4

Terminal Pozisyonu

DUAL

Seri

SIPMOS®

Gate Charge Qg Max Vgs

16.1 nC @ 10 V

REACH Uyumluluk Kodu

compliant

Terminal Kaplaması

Matte Tin (Sn)

Package Body Material

PLASTIC/EPOXY

Vgsth Max Id

1.8V @ 400µA

Terminal Formu

GULL WING

Yüzey Montaj

YES