BSP125L6327

Specifications

Package Shape

RECTANGULAR

Qualification Status

Not Qualified

Reflow Temperaturemax S

40

JESD-609 Kodu

e3

Package Description

GREEN, PLASTIC PACKAGE-4

Part Life Cycle Code

Obsolete

Drain Currentmax Abs Id

0.12 A

Jesd30 Code

R-PDSO-G4

Rohs Code

Yes

Pin Sayısı

4

Drainsource On Resistancemax

45 Ω

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Current Continuous Drain Id25

120mA (Ta)

HTS Kodu

8541.29.00.75

Tepe Reflow Sıcaklığı (°C)

260

Drain To Source Voltage Vdss

600 V

Continuous Drain Current Id

120

Input Capacitance Ciss Max Vds

150 pF @ 25 V

Technology

MOSFET (Metal Oxide)

Rds On Max Id Vgs

45Ohm @ 120mA, 10V

Fet Type

N-Channel

Transistor Element Material

SILICON

Üretici Parça No

BSP125L6327

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Risk Rank

5.6

Drain Currentmax Id

0.12 A

Kılıf / Paket

TO-261-4, TO-261AA

Package Style

SMALL OUTLINE

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Operating Temperaturemax

150 °C

Kurşunsuz Kodu

Yes

Case Connection

DRAIN

Moisture Sensitivity Levels

1

Pulsed Drain Currentmax Idm

0.48 A

Power Dissipation Max

1.8W (Ta)

Additional Feature

LOGIC LEVEL COMPATIBLE

Channel Type

N

Ürün Durumu

Active

Operating Mode

ENHANCEMENT MODE