BSO330N02KG

Specifications

Pin Sayısı

8

Current Continuous Drain Id25

5.4A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Package Style

SMALL OUTLINE

Minimum Operating Temperature

- 55 C

Rise Time

16.8 ns

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Yüzey Montaj

YES

Pd Power Dissipation

2.5 W

Avalanche Energy Rating Eas

19 mJ

Drain To Source Voltage Vdss

20V

Package Shape

RECTANGULAR

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

26 A

Power Dissipationmax Abs

2.5 W

Drain Currentmax Abs Id

5.4 A

Transistor Element Material

SILICON

Vgs Th Gatesource Threshold Voltage

1.2 V

Number Of Terminals

8

Channel Mode

Enhancement

Typical Turnoff Delay Time

13.4 ns

Transistor Type

2 N-Channel

Package Description

GREEN, PLASTIC, TDSON-8

Vgsth Max Id

1.2V @ 20µA

Uzunluk

4.9 mm

Part Aliases

SP000380284 BSO330N02KGFUMA1

REACH Uyumluluk Kodu

compliant

Technology

Si

Genişlik

3.9 mm

Operating Temperaturemax

150 °C

Package Body Material

PLASTIC/EPOXY

Power Max

1.4W

Fet Type

2 N-Channel (Dual)

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Ambalaj

Cut Tape

Risk Rank

5.82

Moisture Sensitive

Yes

Rds On Drainsource Resistance

30 mOhms