BSO083N03MSG

Specifications

Ds Breakdown Voltagemin

30 V

Terminal Kaplaması

Matte Tin (Sn)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Kurşunsuz Kodu

Yes

Power Dissipation

1.56

Input Capacitance Ciss Max Vds

2100 pF @ 15 V

Drainsource On Resistancemax

0.0083 Ω

Gate Charge Qg Max Vgs

27 nC @ 10 V

Continuous Drain Current Id

11

Transistor Application

SWITCHING

Drain Currentmax Id

9.8 A

Rds On Max Id Vgs

8.3mOhm @ 14A, 10V

Vgs Max

±20V

Polaritychannel Type

N-CHANNEL

Channel Type

N

Seri

OptiMOS™ 3

Qualification Status

Not Qualified

Number Of Elements

1

Rohs Code

Yes

Configuration

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Levels

3

Ürün Durumu

Active

Power Dissipation Max

1.56W (Ta)

Tedarikçi Cihaz Paketi

PG-DSO-8

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G8

Terminal Formu

GULL WING

Part Life Cycle Code

Obsolete

Üretici Parça No

BSO083N03MSG

ECCN Kodu

EAR99

Reflow Temperaturemax S

40

Paket

Bulk

Risk Rank

5.81

Tepe Reflow Sıcaklığı (°C)

260

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Fet Type

N-Channel

Package Body Material

PLASTIC/EPOXY

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Operating Temperaturemax

150 °C

Technology

MOSFET (Metal Oxide)