BSL214NL6327

Specifications

Risk Rank

5.81

Drainsource On Resistancemax

0.14 Ω

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Part Life Cycle Code

Obsolete

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Voltage Vdss

20V

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMAIBLE

Reflow Temperaturemax S

40

Vgsth Max Id

1.2V @ 3.7µA

Tepe Reflow Sıcaklığı (°C)

260

Package Body Material

PLASTIC/EPOXY

Input Capacitance Ciss Max Vds

143pF @ 10V

Package Style

SMALL OUTLINE

Moisture Sensitivity Levels

1

Yüzey Montaj

YES

JESD-609 Kodu

e3

Number Of Elements

2

Paket

Bulk

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Terminal Kaplaması

MATTE TIN

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

0.8nC @ 5V

Power Max

500mW

Package Shape

RECTANGULAR

Montaj Tipi

Surface Mount

Ds Breakdown Voltagemin

20 V

Polaritychannel Type

N-CHANNEL

Drain Currentmax Abs Id

1.5 A

Kurşunsuz Kodu

Yes

Feedback Capmax Crss

9 pF

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Fet Feature

Logic Level Gate

REACH Uyumluluk Kodu

compliant

Üretici Parça No

BSL214NL6327

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Rohs Code

Yes

Fet Type

2 N-Channel (Dual)