BSB008NE2LXXT

Specifications

Transistor Element Material

SILICON

Drain To Source Resistance

800 mΩ

Operating Mode

ENHANCEMENT MODE

Part Life Cycle Code

Active

Package Style

CHIP CARRIER

Operating Temperaturemax

150 °C

Rise Time

47.2 ns

Drain To Source Breakdown Voltage

25 V

Üretici Parça No

BSB008NE2LXXT

Package Body Material

METAL

Jesd30 Code

R-MBCC-N3

Terminal Formu

NO LEAD

Number Of Elements

1

Power Dissipation

89 W

Gate To Source Voltage Vgs

20 V

ECCN Kodu

EAR99

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Turn Off Delay Time

75 ns

RoHS

Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

180 A

Operating Temperaturemin

-40 °C

Min. Çalışma Sıcaklığı

-40 °C

Package Shape

RECTANGULAR

Number Of Terminals

3

Rohs Code

Yes

Montaj

Surface Mount

Terminal Pozisyonu

BOTTOM

REACH Uyumluluk Kodu

compliant

Avalanche Energy Rating Eas

600 mJ

Transistor Application

SWITCHING

Yüzey Montaj

YES

Drainsource On Resistancemax

0.0008 Ω

Case Connection

DRAIN

Continuous Drain Current Id

180 A

Risk Rank

5.7

Ds Breakdown Voltagemin

25 V

Pin Sayısı

2

Fabrika Tedarik Süresi

26 Weeks

Maks. Çalışma Sıcaklığı

150 °C