Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- PNP
- Operating Temperaturemax
- 150 °C
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 2mA, 2V
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Dc Current Gainmin Hfe
- 60
- Currentcollector Ic Max
- 750 mA
- Yüzey Montaj
- NO
- Transition Frequencynom Ft
- 125 MHz
- Part Life Cycle Code
- Obsolete
- Current Collector Cutoff Max
- 100nA (ICBO)
- Configuration
- Single
- Frequency Transition
- 100MHz
- Risk Rank
- 5.64
- Package Description
- ,
- Ihs Manufacturer
- HARRIS SEMICONDUCTOR
- REACH Uyumluluk Kodu
- unknown
- Polaritychannel Type
- PNP
- Montaj Tipi
- Through Hole
- Power Max
- 500 mW
- Collector Currentmax Ic
- 0.75 A
- Paket
- Bulk
- Ürün Durumu
- Active
- JESD-609 Kodu
- e0
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage Collector Emitter Breakdown Max
- 40 V
- Tedarikçi Cihaz Paketi
- TO-92
- Vce Saturation Max Ib Ic
- 750mV @ 50mA, 500mA
- Power Dissipationmax Abs
- 0.5 W
- Rohs Code
- No
- Çalışma Sıcaklığı
- -65°C ~ 135°C (TJ)
- Üretici Parça No
- GES5815
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