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GA04JT17-247

GeneSiC Semiconductor

GA04JT17-247

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Continuous Drain Current Id
15A
Power Dissipation
106W
Kılıf / Paket
TO-247-3
Montaj Tipi
Through Hole
Turn Off Delay Time
19 ns
Turn On Delay Time
10 ns
Reach Svhc
No SVHC
Pin Sayısı
3
Yayın Yılı
2013
Polarity
NPN
Power Dissipation Max
106W Tc
Ambalaj
Tube
Fall Time Typ
50 ns
ECCN Kodu
EAR99
Drain To Source Voltage Vdss
1700V
Montaj
Through Hole
RoHS Durumu
RoHS Compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Current Continuous Drain Id25
4A Tc 95°C
Rds On Max Id Vgs
480m Ω @ 4A
Rise Time
28ns
Yükseklik
25.934mm
Element Configuration
Single
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Fabrika Tedarik Süresi
18 Weeks
Çalışma Sıcaklığı
175°C TJ
Number Of Channels
1

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