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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Fet Technology
- JUNCTION
- Continuous Drain Current Id
- 5mA
- Montaj
- Through Hole
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Voltage Rated Dc
- 35V
- Element Configuration
- Single
- Voltage Cutoff Vgs Off Id
- 1 V @ 1 µA
- Terminal Pozisyonu
- BOTTOM
- Montaj Tipi
- Through Hole
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Voltage Breakdown Vbrgss
- 35 V
- Gate To Source Voltage Vgs
- -35V
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Power Dissipation
- 625mW
- Qualification Status
- Not Qualified
- Temel Parça No
- J112
- Drain To Source Resistance
- 50Ohm
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2006
- Feedback Capmax Crss
- 5 pF
- Max Power Dissipation
- 625mW
- Resistance Rdson
- 50 Ohms
- Ürün Durumu
- Active
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 201mg
- Paket
- Bulk
- Transistor Application
- SWITCHING
- Operating Mode
- DEPLETION MODE
- Fabrika Tedarik Süresi
- 6 Weeks
- Current Drain Idss Vds Vgs0
- 5 mA @ 15 V
- Power Max
- 625 mW
- Drain To Source Voltage Vdss
- 35V
- Fet Type
- N-Channel
- Tedarikçi Cihaz Paketi
- TO-92-3
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