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Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 625mW
- Kurşunsuz
- Lead Free
- Drain To Source Resistance
- 6Ohm
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 625mW
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Kurşunsuz Kodu
- yes
- Ambalaj
- Tube
- JESD-609 Kodu
- e3
- Tedarikçi Cihaz Paketi
- GBJ
- Power Max
- 625 mW
- Transistor Application
- SWITCHING
- Kılıf / Paket
- 4-ESIP
- Polarity
- NPN
- Terminal Pozisyonu
- BOTTOM
- Voltage Peak Reverse Max
- 100V
- HTS Kodu
- 8541.21.00.95
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 200mA
- Voltage Forward Vf Max If
- 1.1V @ 20A
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 25V
- Number Of Elements
- 1
- Current Reverse Leakage Vr
- 5µA @ 100V
- Ürün Durumu
- Active
- Resistance Rdson
- 6 Ohms
- Yayın Yılı
- 2013
- ECCN Kodu
- EAR99
- Diode Type
- Single Phase
- Reach Svhc
- No SVHC
- Akım Değeri
- 200mA
- Drain To Source Voltage Vdss
- 25V
- Fet Type
- N-Channel
- Technology
- Standard
- Fabrika Tedarik Süresi
- 7 Weeks
- Current Drain Idss Vds Vgs0
- 200 mA @ 15 V
- Operating Mode
- DEPLETION MODE
- Paket
- Bulk
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