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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN - Darlington
- Hfemin
- 750
- Max Breakdown Voltage
- 100V
- Dc Current Gain Hfe Min Ic Vce
- 750 @ 3A, 3V
- Collector Emitter Voltage Vceo
- 100V
- Terminal Sayısı
- 3
- Voltage Rated Dc
- 100V
- Ürün Durumu
- Active
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 70W
- Transistor Element Material
- SILICON
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Case Connection
- COLLECTOR
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2010
- Transistor Application
- SWITCHING
- Vce Saturation Max Ib Ic
- 2.5V @ 6mA, 3A
- Polarity
- NPN
- Pin Sayısı
- 3
- Power Dissipation
- 70W
- Genişlik
- 4.7mm
- Kılıf / Paket
- TO-220-3
- Weight
- 1.8g
- Collectoremitter Breakdown Voltage
- 100V
- Montaj Tipi
- Through Hole
- Power Max
- 70 W
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- 150°C (TJ)
- Akım Değeri
- 10A
- Paket
- Bulk
- Max Collector Current
- 10A
- Current Collector Cutoff Max
- 500µA
- Additional Feature
- LEADFORM OPTIONS ARE AVAILABLE
- Montaj
- Through Hole
- Contact Plating
- Tin
- Continuous Collector Current
- 10A
- Pin Sayısı
- 2
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