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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frequency Transition
- 300MHz
- Kurşunsuz
- Lead Free
- Power Max
- 625 mW
- Lifecycle Status
- ACTIVE (Last Updated: 13 hours ago)
- Collector Emitter Voltage Vceo
- 140V
- Çalışma Sıcaklığı
- 150°C (TJ)
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA, 5V
- Collectoremitter Saturation Voltage
- 250mV
- Montaj Tipi
- Through Hole
- Max Collector Current
- 600mA
- Temel Parça No
- 2N5550
- ECCN Kodu
- EAR99
- Transition Frequency
- 100MHz
- Contact Plating
- Tin
- Hfemin
- 60
- Max Power Dissipation
- 625mW
- Voltage Collector Emitter Breakdown Max
- 140 V
- Currentcollector Ic Max
- 600 mA
- Collector Base Voltage Vcbo
- 160V
- Terminal Pozisyonu
- BOTTOM
- Akım Değeri
- 600mA
- Collectoremitter Breakdown Voltage
- 140V
- Max Breakdown Voltage
- 140V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Weight
- 240mg
- Ambalaj
- Tape & Box (TB)
- Paket
- Bulk
- Yayın Yılı
- 2007
- Transistor Type
- NPN
- Pin Sayısı
- 3
- Tedarikçi Cihaz Paketi
- TO-92-3
- Power Dissipation
- 625mW
- Frekans
- 300MHz
- Transistor Element Material
- SILICON
- Transistor Application
- AMPLIFIER
- RoHS Durumu
- ROHS3 Compliant
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 50mA
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