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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-261-4, TO-261AA
- Pin Sayısı
- 4
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e3
- Power Dissipation
- 2W
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Max Breakdown Voltage
- 160V
- Emitter Base Voltage Vebo
- 6V
- Tepe Reflow Süresi (maks. sn)
- 40
- Gain Bandwidth Product
- 130MHz
- Transition Frequency
- 130MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Current Collector Cutoff Max
- 50nA ICBO
- Genişlik
- 3.7mm
- Element Configuration
- Single
- Yükseklik
- 1.65mm
- Parça Durumu
- Active
- Frekans
- 130MHz
- Terminal Sayısı
- 4
- Collector Base Voltage Vcbo
- 180V
- Terminal Kaplaması
- Matte Tin (Sn)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Pozisyonu
- DUAL
- Transistor Application
- AMPLIFIER
- Transistor Type
- NPN
- Montaj Tipi
- Surface Mount
- Vce Saturation Max Ib Ic
- 200mV @ 5mA, 50mA
- Weight
- 7.994566mg
- Max Power Dissipation
- 2W
- Pin Sayısı
- 4
- Max Collector Current
- 600mA
- Yayın Yılı
- 2006
- Collectoremitter Breakdown Voltage
- 160V
- Temel Parça No
- ZXTN5551
- Kurşunsuz Kodu
- yes
- Uzunluk
- 6.7mm
- Transistor Element Material
- SILICON
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