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ZXTN25100DGQTA

Diodes Incorporated

ZXTN25100DGQTA

Single BJT Transistors

RoHS: Compliant

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Specifications

Kılıf / Paket
TO-261-4, TO-261AA
RoHS Durumu
ROHS3 Compliant
Frequency Transition
175MHz
Terminal Kaplaması
Matte Tin (Sn)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Type
NPN
Montaj Tipi
Surface Mount
JESD-609 Kodu
e3
Vce Saturation Max Ib Ic
500mV @ 600mA, 3A
Montaj
Surface Mount
Max Breakdown Voltage
100V
Power Max
1.2W
Max Power Dissipation
1.2W
Max Collector Current
3A
Yayın Yılı
2015
Collectoremitter Breakdown Voltage
100V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Current Collector Cutoff Max
50nA ICBO
Çalışma Sıcaklığı
-55°C~150°C TJ
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Dc Current Gain Hfe Min Ic Vce
300 @ 10mA 2V
REACH Uyumluluk Kodu
not_compliant
Collector Emitter Voltage Vceo
500mV
Fabrika Tedarik Süresi
13 Weeks
Ambalaj
Tape & Reel (TR)
ECCN Kodu
EAR99
Parça Durumu
Active

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