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ZXTN2010A

Diodes Incorporated

ZXTN2010A

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
100 @ 2A 1V
Çalışma Sıcaklığı
-55°C~150°C TJ
Voltage Rated Dc
60V
Kurşunsuz
Lead Free
Genişlik
2.41mm
Current Collector Cutoff Max
50nA ICBO
Uzunluk
4.77mm
Temel Parça No
ZXTN2010A
Collectoremitter Breakdown Voltage
60V
Continuous Collector Current
4.5A
Gain Bandwidth Product
130MHz
Collector Base Voltage Vcbo
150V
Parça Durumu
Active
Yükseklik
4.01mm
ECCN Kodu
EAR99
Ambalaj
Bulk
Fabrika Tedarik Süresi
30 Weeks
Collector Emitter Voltage Vceo
60V
Element Configuration
Single
Transistor Type
NPN
Montaj Tipi
Through Hole
Nem Hassasiyeti (MSL)
1 (Unlimited)
Radyasyon Dayanımı
No
Terminal Kaplaması
Matte Tin (Sn)
Akım Değeri
4.5A
Kılıf / Paket
E-Line-3
RoHS Durumu
ROHS3 Compliant
Emitter Base Voltage Vebo
7V
Yayın Yılı
2006
Max Collector Current
4.5A
Max Power Dissipation
1W
Reach Svhc
No SVHC
Pin Sayısı
3
Montaj
Through Hole
Vce Saturation Max Ib Ic
210mV @ 200mA, 5A
JESD-609 Kodu
e3

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