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ZXT10N50DE6TA

Diodes Incorporated

ZXT10N50DE6TA

Single BJT Transistors

RoHS: Compliant

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Specifications

Max Breakdown Voltage
50V
Kılıf / Paket
SOT-23-6
Genişlik
1.8mm
Terminal Pozisyonu
DUAL
JESD-609 Kodu
e3
Max Collector Current
3A
Pin Sayısı
6
Transition Frequency
165MHz
Number Of Elements
1
Temel Parça No
ZXT10N50D
Yükseklik
1.3mm
Terminal Kaplaması
Matte Tin (Sn)
Transistor Type
NPN
Montaj
Surface Mount
Çalışma Sıcaklığı
-55°C~150°C TJ
Uzunluk
3.1mm
Terminal Formu
GULL WING
Vce Saturation Max Ib Ic
300mV @ 100mA, 3A
Voltage Rated Dc
50V
Collectoremitter Breakdown Voltage
50V
Frekans
165MHz
Dc Current Gain Hfe Min Ic Vce
100 @ 2A 2V
Radyasyon Dayanımı
No
Max Power Dissipation
1.1W
Kurşunsuz Kodu
yes
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
15 Weeks
Akım Değeri
3A
Transistor Application
SWITCHING
Power Dissipation
1.7W
Element Configuration
Single
Tepe Reflow Süresi (maks. sn)
40
Collectoremitter Saturation Voltage
225mV
Current Collector Cutoff Max
100nA
Transistor Element Material
SILICON
Polaritychannel Type
NPN
Pin Sayısı
6
Emitter Base Voltage Vebo
5V
Montaj Tipi
Surface Mount
Parça Durumu
Active

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