
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 1.5W Ta
- Drain To Source Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Weight
- 130.492855mg
- Terminal Sayısı
- 3
- Direnç
- 250mOhm
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 3V @ 250μA
- Yayın Yılı
- 2002
- Input Capacitance Ciss Max Vds
- 166pF @ 40V
- Gate To Source Voltage Vgs
- 20V
- Case Connection
- DRAIN
- Power Dissipation
- 2.6W
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- 40
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Voltage Rated Dc
- 60V
- Terminal Formu
- FLAT
- Rise Time
- 1.4ns
- Uzunluk
- 4.6mm
- Continuous Drain Current Id
- 2.5A
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 1.9A Ta
- Akım Değeri
- 1.2A
- Kurşunsuz Kodu
- no
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 17 Weeks
- Radyasyon Dayanımı
- No
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 3.2nC @ 10V
- Pin Sayısı
- 3
- Turn Off Delay Time
- 4.9 ns
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors

