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ZXMN3A03E6TA

Diodes Incorporated

ZXMN3A03E6TA

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Turn On Delay Time
2.9 ns
Parça Durumu
Active
Rise Time
6.4ns
Fabrika Tedarik Süresi
17 Weeks
Weight
14.996898mg
Current Continuous Drain Id25
3.7A Ta
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Fall Time Typ
6.4 ns
Transistor Element Material
SILICON
Terminal Kaplaması
Matte Tin (Sn)
Transistor Application
SWITCHING
Terminal Pozisyonu
DUAL
Çalışma Sıcaklığı
-55°C~150°C TJ
Gate To Source Voltage Vgs
20V
Fet Type
N-Channel
Kılıf / Paket
SOT-23-6
Akım Değeri
4.2A
Drain To Source Breakdown Voltage
30V
JESD-609 Kodu
e3
Power Dissipation
1.7W
Continuous Drain Current Id
4.6A
Montaj Tipi
Surface Mount
Tepe Reflow Süresi (maks. sn)
40
Drain Currentmax Abs Id
3.7A
Yayın Yılı
2006
Ambalaj
Tape & Reel (TR)
RoHS Durumu
ROHS3 Compliant
Reach Svhc
No SVHC
Tepe Reflow Sıcaklığı (°C)
260
Rds On Max Id Vgs
50m Ω @ 7.8A, 10V
ECCN Kodu
EAR99
Power Dissipation Max
1.1W Ta
Gate Charge Qg Max Vgs
12.6nC @ 10V
Number Of Elements
1
Pin Sayısı
6
Element Configuration
Single
Vgs Max
±20V
Uzunluk
3.1mm
Operating Mode
ENHANCEMENT MODE
Terminal Sayısı
6

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