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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Pozisyonu
- DUAL
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Fet Type
- N-Channel
- Akım Değeri
- 6.7A
- Parça Durumu
- Discontinued
- Turn On Delay Time
- 3.9 ns
- Rise Time
- 5.5ns
- Current Continuous Drain Id25
- 5.3A Ta
- Weight
- 139.989945mg
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Fall Time Typ
- 5.5 ns
- Drain Currentmax Abs Id
- 5.3A
- Yayın Yılı
- 2012
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
- RoHS Durumu
- ROHS3 Compliant
- Rds On Max Id Vgs
- 25m Ω @ 12A, 10V
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Power Dissipation
- 1.8W
- Continuous Drain Current Id
- 6.7A
- Terminal Sayısı
- 8
- Vgs Max
- ±20V
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 3.1mm
- Yükseklik
- 950μm
- Input Capacitance Ciss Max Vds
- 1400pF @ 25V
- Voltage Rated Dc
- 30V
- Genişlik
- 3.1mm
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 1V @ 250μA
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