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Specifications
- Power Dissipation Max
- 1.56W Ta
- Gate Charge Qg Max Vgs
- 18.9nC @ 4.5V
- Number Of Elements
- 1
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±12V
- Terminal Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 1900pF @ 10V
- Kurşunsuz
- Lead Free
- Voltage Rated Dc
- 20V
- Vgsth Max Id
- 700mV @ 250μA
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number Of Channels
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- Direnç
- 20mOhm
- Turn Off Delay Time
- 33.3 ns
- Radyasyon Dayanımı
- No
- Parça Durumu
- Obsolete
- Turn On Delay Time
- 7.9 ns
- Rise Time
- 10ns
- Current Continuous Drain Id25
- 8.3A Ta
- Weight
- 73.992255mg
- Drive Voltage Max Rds On Min Rds On
- 2.5V 4.5V
- Fall Time Typ
- 10 ns
- Transistor Element Material
- SILICON
- Terminal Kaplaması
- Matte Tin (Sn)
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- DUAL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 12V
- Pulsed Drain Currentmax Idm
- 50A
- Fet Type
- N-Channel
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Akım Değeri
- 10.2A
- Drain To Source Breakdown Voltage
- 20V
- JESD-609 Kodu
- e3
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