ZXMN10A11KTC

Specifications

Vgsth Max Id

4V @ 250μA

Genişlik

6.22mm

Kurşunsuz

Lead Free

Yükseklik

2.39mm

Input Capacitance Ciss Max Vds

274pF @ 50V

Terminal Sayısı

2

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

6.73mm

Element Configuration

Single

Pin Sayısı

3

Number Of Elements

1

Gate Charge Qg Max Vgs

5.4nC @ 10V

Power Dissipation Max

2.11W Ta

Radyasyon Dayanımı

No

Turn Off Delay Time

7.4 ns

Direnç

350mOhm

Kurşunsuz Kodu

no

Montaj

Surface Mount

Terminal Formu

GULL WING

Case Connection

DRAIN

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

1

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

9.9A

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

100V

Transistor Application

SWITCHING

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Fall Time Typ

3.5 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Weight

3.949996g

Current Continuous Drain Id25

2.4A Ta

Fabrika Tedarik Süresi

17 Weeks

Jesd30 Code

R-PSSO-G2

Rise Time

1.7ns