ZXMN10A11GTA

Specifications

Fall Time Typ

3.5 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Turn On Delay Time

2.7 ns

Parça Durumu

Active

Current Continuous Drain Id25

1.7A Ta

Weight

7.994566mg

Rise Time

1.7ns

Jesd30 Code

R-PDSO-G4

Akım Değeri

1A

Fet Type

N-Channel

Kılıf / Paket

TO-261-4, TO-261AA

Terminal Kaplaması

Matte Tin (Sn)

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

DUAL

Power Dissipation

3.9W

Continuous Drain Current Id

2.4A

Drain To Source Breakdown Voltage

100V

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Rds On Max Id Vgs

350m Ω @ 2.6A, 10V

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Montaj Tipi

Surface Mount

Yayın Yılı

2010

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

260

Reach Svhc

No SVHC

Element Configuration

Single

Power Dissipation Max

2W Ta

Number Of Elements

1

Gate Charge Qg Max Vgs

5.4nC @ 10V

Vgsth Max Id

4V @ 250μA

Uzunluk

6.7mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Terminal Sayısı

4

Kurşunsuz

Lead Free