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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım
- 8A
- Parça Durumu
- Active
- Turn On Delay Time
- 1.8 ns
- Fabrika Tedarik Süresi
- 17 Weeks
- Rise Time
- 1.5ns
- Current Continuous Drain Id25
- 700mA Ta
- Weight
- 7.994566mg
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Gerilim
- 100V
- Fall Time Typ
- 1.5 ns
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Pozisyonu
- DUAL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 20V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Fet Type
- N-Channel
- Akım Değeri
- 800mA
- Drain To Source Breakdown Voltage
- 100V
- JESD-609 Kodu
- e3
- Power Dissipation
- 625mW
- Continuous Drain Current Id
- 800mA
- Yayın Yılı
- 2006
- Tepe Reflow Süresi (maks. sn)
- 40
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Rds On Max Id Vgs
- 700m Ω @ 1.5A, 10V
- ECCN Kodu
- EAR99
- Power Dissipation Max
- 625mW Ta
- Gate Charge Qg Max Vgs
- 2.9nC @ 10V
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Vgs Max
- ±20V
- Operating Mode
- ENHANCEMENT MODE
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