ZXM66P03N8TA

Specifications

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

39.6 ns

Rise Time

16.3ns

Fabrika Tedarik Süresi

10 Weeks

Current Continuous Drain Id25

6.25A Ta

Weight

73.992255mg

Parça Durumu

Obsolete

Turn On Delay Time

7.6 ns

Fet Type

P-Channel

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Akım Değeri

-7.9A

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Terminal Kaplaması

Matte Tin (Sn)

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Continuous Drain Current Id

7.9A

Power Dissipation

2.5W

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

-30V

Rds On Max Id Vgs

25m Ω @ 5.6A, 10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

260

Reach Svhc

No SVHC

Tepe Reflow Süresi (maks. sn)

40

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

6.25A

Yayın Yılı

2006

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

36nC @ 5V

Number Of Elements

1

Pin Sayısı

8

Power Dissipation Max

1.56W Ta

Vgsth Max Id

1V @ 250μA

Input Capacitance Ciss Max Vds

1979pF @ 25V

Yükseklik

1.5mm

Kurşunsuz

Lead Free