Volume pricing
- 1+ pcs$0.45
- 10+ pcs$0.43
- 100+ pcs$0.40
- 500+ pcs$0.38
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 12 ns
- Fet Type
- P-Channel
- Tepe Reflow Sıcaklığı (°C)
- 260
- Weight
- 7.994566mg
- Rds On Max Id Vgs
- 25 Ω @ 150mA, 10V
- Drain Currentmax Abs Id
- 0.3A
- Case Connection
- DRAIN
- Terminal Kaplaması
- Matte Tin (Sn)
- Fall Time Typ
- 15 ns
- Continuous Drain Current Id
- 200mA
- Yayın Yılı
- 2006
- Kurşunsuz Kodu
- no
- Genişlik
- 3.7mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 17 Weeks
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Uzunluk
- 6.7mm
- Jesd30 Code
- R-PDSO-G4
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 4
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 100pF @ 25V
- Drain To Source Voltage Vdss
- 200V
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Single
- Yükseklik
- 1.65mm
- Kılıf / Paket
- TO-261-4, TO-261AA
- Turn On Delay Time
- 7 ns
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Ambalaj
- Cut Tape (CT)
- Terminal Pozisyonu
- DUAL
- Power Dissipation
- 2W
- Drain To Source Breakdown Voltage
- -200V
- Tepe Reflow Süresi (maks. sn)
- 40
- Current Continuous Drain Id25
- 200mA Ta
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