Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- -100V
- Radyasyon Dayanımı
- No
- Rise Time
- 15ns
- Parça Durumu
- Active
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 700mW Ta
- Number Of Channels
- 1
- Direnç
- 8Ohm
- Ambalaj
- Bulk
- Terminal Pozisyonu
- BOTTOM
- Power Dissipation
- 700mW
- Drain To Source Breakdown Voltage
- -100V
- Current Continuous Drain Id25
- 230mA Ta
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Montaj Tipi
- Through Hole
- Vgsth Max Id
- 3.5V @ 1mA
- Montaj
- Through Hole
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Turn On Delay Time
- 7 ns
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Voltage Vdss
- 100V
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Element Configuration
- Single
- Yükseklik
- 4.01mm
- Reference Standard
- CECC
- Transistor Application
- SWITCHING
- Uzunluk
- 4.77mm
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Threshold Voltage
- -3.5V
- Input Capacitance Ciss Max Vds
- 100pF @ 25V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
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