Volume pricing
- 1+ pcs$0.88
- 10+ pcs$0.83
- 100+ pcs$0.79
- 500+ pcs$0.74
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Tepe Reflow Sıcaklığı (°C)
- 260
- Rds On Max Id Vgs
- 2 Ω @ 1A, 10V
- Weight
- 453.59237mg
- Akım Değeri
- 450mA
- Drain Currentmax Abs Id
- 0.45A
- Terminal Kaplaması
- Matte Tin (Sn)
- Kurşunsuz Kodu
- yes
- Genişlik
- 2.41mm
- Yayın Yılı
- 2012
- Continuous Drain Current Id
- 450mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 17 Weeks
- Number Of Elements
- 1
- Terminal Formu
- WIRE
- Transistor Application
- SWITCHING
- Uzunluk
- 4.77mm
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 75pF @ 18V
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Element Configuration
- Single
- Yükseklik
- 4.01mm
- Kılıf / Paket
- E-Line-3
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 700mW
- Drain To Source Breakdown Voltage
- 60V
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 450mA Ta
- Tepe Reflow Süresi (maks. sn)
- 40
- Montaj Tipi
- Through Hole
- Vgsth Max Id
- 2.4V @ 1mA
- Montaj
- Through Hole
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