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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain Bandwidth Product
- 210MHz
- Kurşunsuz Kodu
- yes
- Genişlik
- 1.26mm
- Power Dissipation
- 500mW
- Collectoremitter Saturation Voltage
- -180mV
- JESD-609 Kodu
- e3
- Pin Sayısı
- 3
- Akım Değeri
- -1A
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 20V
- Polaritychannel Type
- PNP
- ECCN Kodu
- EAR99
- Weight
- 6.010099mg
- Frekans
- 210MHz
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- 5V
- Transition Frequency
- 210MHz
- Yükseklik
- 1mm
- Max Power Dissipation
- 500mW
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Temel Parça No
- ZUMT718
- Max Breakdown Voltage
- 20V
- Vce Saturation Max Ib Ic
- 250mV @ 100mA, 1A
- Yayın Yılı
- 2006
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 500mA 2V
- Current Collector Cutoff Max
- 10nA
- Uzunluk
- 2.2mm
- Collector Emitter Voltage Vceo
- 20V
- Transistor Type
- PNP
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 15 Weeks
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- 20V
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