Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 453.59237mg
- Gain Bandwidth Product
- 130MHz
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- E-Line-3
- Terminal Formu
- WIRE
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 15 Weeks
- Vce Saturation Max Ib Ic
- 200mV @ 400mA, 4A
- Continuous Collector Current
- 4A
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- 40
- Tepe Reflow Sıcaklığı (°C)
- 260
- Uzunluk
- 4.77mm
- Max Collector Current
- 4A
- Number Of Elements
- 1
- Yükseklik
- 4.01mm
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 100V
- Max Power Dissipation
- 1.2W
- Akım Değeri
- 4A
- Yayın Yılı
- 2006
- Collector Base Voltage Vcbo
- 200V
- Montaj
- Through Hole
- Collectoremitter Breakdown Voltage
- 100V
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Transition Frequency
- 130MHz
- Current Collector Cutoff Max
- 50nA ICBO
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Reach Svhc
- No SVHC
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 2A 2V
- Ambalaj
- Tape & Box (TB)
- Frekans
- 130MHz
- Voltage Rated Dc
- 100V
- Polaritychannel Type
- NPN
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- 160mV
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
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