Volume pricing
- 1+ pcs$1.09
- 10+ pcs$1.03
- 100+ pcs$0.97
- 500+ pcs$0.91
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2012
- Max Power Dissipation
- 1W
- Akım Değeri
- -500mA
- Collector Base Voltage Vcbo
- -300V
- Collector Emitter Voltage Vceo
- 500mV
- Yükseklik
- 4.01mm
- Element Configuration
- Single
- Currentcollector Ic Max
- 500mA
- Number Of Elements
- 1
- Max Collector Current
- 500mA
- Uzunluk
- 4.77mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- 40
- Vce Saturation Max Ib Ic
- 500mV @ 10mA, 100mA
- Fabrika Tedarik Süresi
- 15 Weeks
- Continuous Collector Current
- -500mA
- Transistor Element Material
- SILICON
- Terminal Formu
- WIRE
- Kılıf / Paket
- E-Line-3, Formed Leads
- Radyasyon Dayanımı
- No
- Gain Bandwidth Product
- 30MHz
- Weight
- 453.59237mg
- Montaj Tipi
- Through Hole
- Temel Parça No
- ZTX757
- Transistor Type
- PNP
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Genişlik
- 2.41mm
- ECCN Kodu
- EAR99
- Emitter Base Voltage Vebo
- -5V
- Terminal Kaplaması
- Matte Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~200°C TJ
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- -300V
- Polaritychannel Type
- PNP
- Pin Sayısı
- 3
- Reach Svhc
- No SVHC
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 100mA 5V
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