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RoHS
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Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 100V
- Collector Base Voltage Vcbo
- 120V
- Yayın Yılı
- 1997
- Akım Değeri
- -2A
- Max Power Dissipation
- 1W
- Number Of Elements
- 1
- Element Configuration
- Single
- Yükseklik
- 4.01mm
- Uzunluk
- 4.77mm
- Max Collector Current
- 2A
- Tepe Reflow Süresi (maks. sn)
- 40
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Continuous Collector Current
- -2A
- Vce Saturation Max Ib Ic
- 500mV @ 200mA, 2A
- Fabrika Tedarik Süresi
- 15 Weeks
- Kılıf / Paket
- E-Line-3, Formed Leads
- Terminal Formu
- WIRE
- Dc Current Gainmin Hfe
- 25
- Gain Bandwidth Product
- 140MHz
- Radyasyon Dayanımı
- No
- Max Breakdown Voltage
- 100V
- Weight
- 453.59237mg
- Transistor Type
- PNP
- Montaj Tipi
- Through Hole
- Temel Parça No
- ZTX753
- Genişlik
- 2.41mm
- Power Dissipation
- 1W
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~200°C TJ
- Emitter Base Voltage Vebo
- 5V
- Terminal Kaplaması
- Matte Tin (Sn)
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Frekans
- 140MHz
- Collectoremitter Saturation Voltage
- -300mV
- Pin Sayısı
- 3
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