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Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 120V
- Yayın Yılı
- 1997
- Max Power Dissipation
- 1W
- Akım Değeri
- 1A
- Collector Base Voltage Vcbo
- 140V
- Number Of Elements
- 1
- Yükseklik
- 4.01mm
- Element Configuration
- Single
- Uzunluk
- 4.77mm
- Max Collector Current
- 1A
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- 40
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Vce Saturation Max Ib Ic
- 1.5V @ 1mA, 1A
- Fabrika Tedarik Süresi
- 15 Weeks
- Continuous Collector Current
- 1A
- Kılıf / Paket
- E-Line-3
- Terminal Formu
- WIRE
- Radyasyon Dayanımı
- No
- Weight
- 453.59237mg
- Frequency Transition
- 150MHz
- Montaj Tipi
- Through Hole
- Temel Parça No
- ZTX605
- Polarity
- NPN
- Transistor Type
- NPN - Darlington
- Genişlik
- 2.41mm
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 1W
- Çalışma Sıcaklığı
- -55°C~200°C TJ
- ECCN Kodu
- EAR99
- Emitter Base Voltage Vebo
- 10V
- Terminal Kaplaması
- Matte Tin (Sn)
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- 120V
- Collectoremitter Saturation Voltage
- 1V
- Pin Sayısı
- 3
- Reach Svhc
- No SVHC
- Dc Current Gain Hfe Min Ic Vce
- 2000 @ 1A 5V
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