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Technical team support
Specifications
- Max Collector Current
- 1A
- Uzunluk
- 4.77mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- 40
- Max Power Dissipation
- 1W
- Akım Değeri
- 1A
- Yayın Yılı
- 2012
- Collector Base Voltage Vcbo
- 100V
- Collector Emitter Voltage Vceo
- 80V
- Yükseklik
- 4.01mm
- Element Configuration
- Single
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- Frequency Transition
- 150MHz
- Weight
- 453.59237mg
- Fabrika Tedarik Süresi
- 15 Weeks
- Vce Saturation Max Ib Ic
- 1V @ 1mA, 1A
- Continuous Collector Current
- 1A
- Transistor Element Material
- SILICON
- Terminal Formu
- WIRE
- Kılıf / Paket
- E-Line-3
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn)
- Emitter Base Voltage Vebo
- 10V
- Çalışma Sıcaklığı
- -55°C~200°C TJ
- JESD-609 Kodu
- e3
- Temel Parça No
- ZTX603
- Polarity
- NPN
- Montaj Tipi
- Through Hole
- Transistor Type
- NPN - Darlington
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 1W
- Genişlik
- 2.41mm
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Transition Frequency
- 150MHz
- Current Collector Cutoff Max
- 10μA
- Pin Sayısı
- 3
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